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Product category: Electronics and Electrical Subcontracting Services
News Release from: International Rectifier | Subject: IRF6643PbF, a 150V DirectFET MOSFET
Edited by the Manufacturingtalk Editorial Team on 23 January 2007

High-Efficiency 150V DirectFET MOSFET
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International Rectifier has launched the IRF6643PbF, a 150V DirectFET MOSFET for isolated DC-DC converters operating from 36V to 75V universal telecommunications input and 48V fixed input systems.

International Rectifier has launched the IRF6643PbF, a 150V DirectFET MOSFET for isolated DC-DC converters operating from a wide range, 36V to 75V universal telecommunications input and 48V fixed input systems Combining IR's advanced DirectFET packaging technology and its next-generation HEXFET power MOSFET silicon, the new DirectFET device achieves a current rating up to 35 amperes while providing superior thermal performance and higher efficiency in a footprint equal to that of a low-profile SO-8 package

The latest device in IR's DirectFET line-up minimizes conduction, switching and reverse-recovery losses by continuing to improve the critical parameters that determine the performance of power MOSFETs, RDS(on), Qg and Qgd.

These improvements enable operation at higher current levels, while maintaining the smaller form factor of a single MOSFET.

By reducing board space by more than 50%, a single DirectFET MOSFET now can take the place of two or three SO-8 packages.

The device's extremely low typical 10V RDS(on) of 29 mOhms and low inductance makes it well suited for high-current synchronous rectifier sockets.

Also, with its very low 39 nC Qg and 11 nC Qgd, the IRF6643TRPbF functions well as a primary-side MOSFET in isolated or intermediate DC bus converters.

The IRF6643TRPbF is packaged in the medium-sized (MZ) DirectFET package.

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