Product category:
Electrical systems
News Release from: International Rectifier | Subject: Chipset
Edited by the Manufacturingtalk Editorial
Team on 11 April 2007
Low on-state resistance chipset
International Rectifier has introduced the DirectFET MOSFET chipset for high-current DC-DC converters used in advanced telecom and datacom systems, notebook, high-end desktops and servers.
International Rectifier will be exhibiting the DirectFET MOSFET chipset for high-current DC-DC converters used in advanced telecom and datacom systems, notebook, high-end desktops and servers at PCIM, Nurnberg, 22nd May - 24th May 2007, Stand 202 IR's latest DirectFET MOSFET chipset achieves lowest on-state resistance for 25V applications
This article was originally published on Manufacturingtalk on 13 Jun 2007 at 8.00am (UK)
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Developed using the latest HEXFET MOSFET silicon technology and IR's benchmark DirectFET packaging technology, the IRF6712S control FET and IRF6716M sync FET are characterised with extremely low package inductance and device on-state resistance, gate charge and gate-to-drain charge to achieve high efficiency and superior thermal performance.
This allows operation up to 25 amperes per phase, in a small, sleek form factor.
With low typical RDS(on) of only 1.2 mOhm at 10VGS and 2.0 mOhm at 4.5VGS , the IRF6716M MOSFET achieves the lowest on-state resistance for a 25V device, making it well-suited to synchronous rectifier sockets for high-frequency, high-current DC-DC converters used in applications that power high-current loads.
The IRF6716M features a slim 0.7mm profile and the MX pad outline common to two generations of devices, allowing an easy migration from existing low-voltage DirectFET MOSFETs.
optimised for high-current applications where a single control MOSFET is desired, the IRF6712S achieves a low gate charge (Qg) of 13nC and gate-to-drain charge (Qgd) of 4.4nC combined with low typical on-state resistance of 3.8 mOhm at 10VGS and 6.7 mOhm at 4.5VGS.
The IRF6712S also presents a 0.7mm profile and the SQ pad outline common to two generations of control devices, allowing an easy migration from existing low-voltage MOSFETS.
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